|
J308 Datasheet, PDF (1/8 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers | |||
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by J308/D
JFET VHF/UHF Amplifiers
NâChannel â Depletion
3
GATE
1 DRAIN
J308
J309
J310
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain â Source Voltage
GateâSource Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
VGS
IGF
PD
25
Vdc
25
Vdc
10
mAdc
350
mW
2.8
mW/°C
Junction Temperature Range
TJ
â 65 to +125
Storage Temperature Range
Tstg
â 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C
°C
Symbol
OFF CHARACTERISTICS
Gate â Source Breakdown Voltage
(IG = â1.0 µAdc, VDS = 0)
V(BR)GSS
Gate Reverse Current
(VGS = â15 Vdc, VDS = 0, TA = 25°C)
(VGS = â15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
IGSS
VGS(off)
ON CHARACTERISTICS
Zero â Gate âVoltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
IDSS
GateâSource Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
VGS(f)
SMALLâ SIGNAL CHARACTERISTICS
CommonâSource Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J308
J309
J310
Re(yis)
CommonâSource Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yos)
CommonâGate Power Gain
Gpg
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
v v 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 3.0%.
Min
â 25
â
â
â 1.0
â 1.0
â 2.0
12
12
24
â
â
â
â
â
â
1
2
3
CASE 29â04, STYLE 5
TOâ92 (TOâ226AA)
Typ
Max
Unit
â
â
Vdc
â
â1.0
nAdc
â
â1.0
µAdc
Vdc
â
â 6.5
â
â 4.0
â
â 6.5
mAdc
â
60
â
30
â
60
â
1.0
Vdc
mmhos
0.7
â
0.7
â
0.5
â
0.25
â
mmhos
16
â
dB
Motorola SmallâSignal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997
|
▷ |