EFC4612R Datasheet, PDF (4/8 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

EFC4612R
IS -- VSS
6.0
5.5
5.0
4.5
4.0
3.5
VGS=1.5V
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Source-to-Source Voltage, VSS -- V IT14720
RSS(on) -- VGS
140
Ta=25°C
120
IS=3A
100
80
60
40
20
0
0
2
4
6
8
Gate-to-Source Voltage, VGS -- V
IS -- VF(S-S)
10
7 ^VGS=0V
5
3
2
10
IT14682
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Source-to-Source Voltage, VF(S-S) -- V IT14684
VGS -- Qg
4.5
VSS=10V
4.0 IS=6A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
Total Gate Charge, Qg -- nC
IT14686
IS -- VGS
6
VSS=10V
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
Gate-to-Source Voltage, VGS -- V IT14681
RSS(on) -- Ta
140
120
100
VGS=3.7V, ^IS=3A
80
60
VGVSG=2S.=53V.1, _VIS,=I3SA=3A
40
VGS=4.5V, ^IS=3A
20
VGS=4.0V, ^IS=3A
0
--60 --40 --20 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
1000
VSS=10V
7 _VGS=4.5V
5
SW Time -- IS
140 160
IT14683
3
2
td(off)
tf
100
7
tr
5
3
td(on)
2
10
0.01
2
23
5 7 0.1 2 3 5 7 1.0 2 3
Source Current, IS -- A
ASO
5 7 10
IT14685
100
7
ISP=60A
5
3
2
10
7
IS=6A
5
3
2
1.0
7
5
PW≤10μs
1m1s00^μs
DC ^{1o0p0erm1a0tsimons}
3
Operation in this area
2
0.1
is limited by RSS(on).
7
5
3
2
0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm²Ã—0.8mm)
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5}
Source-to-Source Voltage, VSS -- V IT14721
No. A1477-4/8