EFC4612R Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1477B
EFC4612R
N-Channel Power MOSFET
24V, 6A, 45mΩ, Dual EFCP
http://onsemi.com
Features
• _{2.5V drive}
• _{Built-in gate protection resistor}
• _{Best suited for LiB charging and discharging switch}
• _{Common-drain type}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm²Ã—0.8mm)
Ratings
Unit
24
V
±12
V
6
A
60
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7064-001
1.26
4
3
EFC4612R-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Taping Type : TR
Marking
1
2
TR
Electrical Connection
1
FN
LOT No.
0.65
1
2
4
3
0.3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
EFCP1313-4CC-037
Rg
2
Rg
3
Rg=200Ω
4
Semiconductor Components Industries, LLC, 2013
July, 2013
O2412 TKIM/10511 TKIM/O0709PF TKIM TC-00001996 No. A1477-1/8