EFC3C001NUZ Datasheet, PDF (4/6 Pages) ON Semiconductor – Power MOSFET

EFC3C001NUZ
IS -- VSS
6.0
5.5
Ta=25C
5.0
4.5
4.0
3.5
3.0
1.3V
2.5
2.0
1.5
1.0
VGS=1.0V
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Source to Source Voltage, VSS -- V
RSS(on) -- VGS
80
Ta=25C
70
IS=2A
60
50
40
30
10
VSS=10V
9
8
IS -- VGS
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
Gate to Source Voltage, VGS -- V
RSS(on) -- Ta
80
70
60
50
VVGGSS==23..51VV,,IISS==22AA
40
30
VGS=4.5V, ^IS=2A
20
10
0
0
2
4
6
8
10
Gate to Source Voltage, VGS -- V
IS -- VF(S-S)
10
7 VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Source to Source Voltage, VF(S-S) -- V
VGS -- Qg
4.5
VSS=10V
4.0 IS=6A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
12
14
16
Total Gate Charge, Qg -- nC
20
10
V GS=3.8V, ^{I S=2A}
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
100000
7
5
td(off)
SW Time -- IS
3
2
tf
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0.01
tr
td(on)
2 3 5 7 0.1
2 3 5 7 1.0
VSS=10V
VGS=4.5V
2 3 5 7 10
Source Current, IS -- A
SOA
100
7
5
3
ISP=60A
(PW100s)
2
100_s
10
7
IS=6A
1ms
5
3
2
1.0
7
5
3
Operation
in
this
area
DC
1001m0ms s
operation
2 _{is limited by RSS(on).}
0.1
7
5
3
2
Ta=25C
Single pulse
Surface mounted on ceramic substrate
0.01 ^{(5000mm20.8mm)}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Source to Source Voltage, VSS -- V
5 7 ₁₀₀
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