EFC3C001NUZ Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET

EFC3C001NUZ
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Static Source to Source On-State
Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)SSS
ISSS
IGSS
VGS(th)
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
td(on)
tr
td(off)
tf
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=8V, VSS=0V
VSS=10V, IS=1mA
IS=2A, VGS=4.5V
IS=2A, VGS=3.8V
IS=2A, VGS=3.1V
IS=2A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 4
Test Circuit 4
Test Circuit 4
VSS=10V, VGS=4.5V, IS=2A Test Circuit 5
20
0.5
17
23
19.5
26
21
28
24.5
35
50
350
42,000
47,000
V
1 A
1 A
1.3 V
30 m
34 m
39 m
56 m
ns
ns
ns
ns
Total Gate Charge
Forward Source to Source Voltage
Qg
VF(S-S)
VSS=10V, VGS=4.5V, IS=6A Test Circuit 6
IS=2A, VGS=0V
Test Circuit 7
15
nC
0.81
1.2 V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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