CPH6341 Datasheet, PDF (4/6 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH6341
--10
VDS= --15V
--9 ID= --5A
--8
VGS -- Qg
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
7
8
9 10
Total Gate Charge, Qg -- nC
IT13387
2.0
PD -- Ta
When mounted on ceramic substrate
(900mm²âœ•0.8mm)
1.6
1.5
ASO
5
3
2
IDP= --20A
PW≤10ms
--10
7
5
ID= --5A
3
2
--1.0
7
5
3
Operation in this
DC _{ope1ra0t0iomn1s0m1sms100}^ms
2
area is limited by RDS(on).
--0.1
7
5
Ta=25°C
3 ^{Single pulse}
2
--0.01
When mounted on ceramic substrate
(900mm²âœ•0.8mm)
--0.01 ^{2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7}
Drain-to-Source Voltage, VDS -- V IT13388
1.0
0.5
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13389
No. A1084-4/6