CPH6341 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1084B
CPH6341
P-Channel Power MOSFET
–30V, –5A, _{59mΩ, Single CPH6}
http://onsemi.com
Features
• _{Low ON-resistance}
• _{High-speed switching}
• _{4V drive}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10ms, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--30
V
±20
V
--5
A
--20
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
0.15
CPH6341-TL-E
CPH6341-TL-W
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
January, 2014
11614HK TC-00002818/61312 TKIM/30508PE TIIM No. A1084-1/6