CM2006_16 Datasheet, PDF (4/6 Pages) ON Semiconductor – L-C LCD and Camera EMI Filter Array with ESD Protection

CM2006
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
I_{CC_DDC}
I_CC
V_{CC_DDC} Supply Current
V_CC Supply Current
V_{CC_DDC} = 5.0 V
V_CC = 5 V; SYNC inputs at GND or V_CC;
SYNC outputs unloaded
V_CC = 5 V; SYNC inputs at 3.0 V;
SYNC outputs unloaded
Min Typ Max Units
10
mA
1
mA
2.0 mA
V_F
V_IH
V_IL
V_HYS
V_OH
V_OL
R_OUT
I_IN
I_OFF
I_BACKDRIVE
ESD Diode Forward Voltage
Logic High Input Voltage
Logic Low Input Voltage
Hysteresis Voltage
Logic High Output Voltage
Logic Low Output Voltage
SYNC Driver Output Resistance
Input Current
VIDEO Inputs
SYNC_IN1, SYNC_IN2 Inputs
Level Shifting N−MOSFET “OFF” State
Leakage Current
Current conducted from input pins when
Vcc is powered down.
I_F = 10 mA
V_CC = 5.0 V; (Note 2)
V_CC = 5.0 V; (Note 2)
V_CC = 5.0 V; (Note 2)
I_OH = 0 mA, V_CC = 5.0 V; (Note 2)
I_OL = 0 mA, V_CC = 5.0 V; (Note 2)
V_CC = 5.0 V; SYNC Inputs at GND or 3.0 V
V_CC = 5.0 V; V_IN = V_CC or GND
V_CC = 5.0 V; V_IN = V_CC or GND
(V_{CC_DDC} − V_{DDC_IN}) < 0.4 V;
V_{DDC_OUT} = V_{CC_DDC}
(V_{CC_DDC} − V_{DDC_OUT}) < 0.4 V;
V_{DDC_IN} = V_{CC_DDC}
V_CC < V_{INPUT_PIN}; (Note 5)
1.0
V
2.0
V
0.5
V
400
mV
4.0
V
0.15 V
7 15 24
W
±10 mA
±10 mA
10
mA
10
mA
10
mA
V_ON
Voltage Drop Across Level−shifting
N−MOSFET when ”ON”
V_{CC_DDC} = 2.5 V; V_S = GND; I_DS = 3 mA
0.18 V
C_{IN_VID} VIDEO Input Capacitance
V_CC = 5.0 V; V_IN = 2.5 V; f = 1 MHz
3
pF
V_CC = 2.5 V; V_IN = 1.25 V; f = 1 MHz
3.5 pF
t_PLH
SYNC Driver L => H Propagation Delay C_L = 50 pF; V_CC = 5.0 V; Input t_R and t_F < 5 ns
12
ns
t_PHL
SYNC Driver H => L Propagation Delay C_L = 50 pF; V_CC = 5.0 V; Input t_R and t_F < 5 ns
12
ns
t_R, t_F
SYNC Driver Output Rise & Fall Times C_L = 50 pF; V_CC = 5.0 V; Input t_R and t_F < 5 ns
3
ns
V_ESD1
ESD Withstand Voltage, Sync_out pins V_CC = 5 V; (Notes 3 and 4)
only
±2
kV
V_ESD
ESD Withstand Voltage
V_CC = 5 V; (Notes 3 and 5)
±8
kV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. All parameters specified over standard operating conditions unless otherwise noted.
2. These parameters apply only to the SYNC drivers. Note that R_OUT = R_T + R_BUFFER.
3. Per the IEC−61000−4−2 International ESD Standard, Level 4 contact discharge method. BYP and V_CC must be bypassed to GND via a low
impedance ground plane with a 0.22 mF, low inductance, chip ceramic capacitor at each supply pin. ESD pulse is applied between the
applicable pins and GND. ESD pulses can be positive or negative with respect to GND. Applicable pins are: VIDEO_1, VIDEO_2, VIDEO_3,
SYNC_IN1, SYNC_IN2, DDC_IN1 and DDC_IN2. All pins are ESD protected to the industry standard ±2 kV Human Body Model
(MIL−STD−883, Method 3015).
4. This specification applies to the SYNC_OUT pins only.
5. Applicable pins are: VIDEO_1, VIDEO_2, VIDEO_3, SYNC_IN1, SYNC_IN2, DDC_IN1 and DDC_IN2.
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