CM1225 Datasheet, PDF (4/11 Pages) ON Semiconductor – 4-Channel Low Capacitance ESD Protection Arrays

CM1225
ELECTRICAL OPERATING CHARACTERISTICS^{(SEE NOTE 1)}
SYMBOL PARAMETER
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
I_LEAK
Channel Leakage Current
C_IN
Channel Input Capacitance
CONDITIONS
I_F = 10mA; T_A=25ûC;
Note 2
T_A=25°C; V_IN=3.3V, V_N=0V
At 1 MHz, V_N=0V, V_IN=1.65V
MIN TYP MAX UNITS
0.65 0.85 1.20 V
-1.20 -0.85 -0.65 V
±0.1 ±1.0 µA
0.80 1. 0 pF
∆C_IN ^{Channel Input Capacitance Matching}
At 1 MHz, V_N=0V, V_IN=1.65V
0.02
pF
V_ESD ESD Protection - Peak Discharge Voltage
at any channel input, in system:
Contact discharge per
T_A=25°C;
IEC 61000-4-2 standard
Notes 2 and 3
±8
kV
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A,
t_P = 8/20µS;
Note 3
+10.0
V
-4.5
V
R_DYN Dynamic Resistance
Positive Transients
Negative Transients
I_PP = 1A, t_P = 8/20µS
Any I/O pin to Ground;
Note 3
1.3
Ω
1.3
Ω
Note 1: All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
Note 2: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_N grounded.
Note 3: These measurements performed with no external capacitor.
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