CM1220 Datasheet, PDF (4/10 Pages) California Micro Devices Corp – 4 and 8-Channel ESD Protection Arrays in CSP

CM1220
Electrical Operating Characteristics (see Note 1)
SYMBOL PARAMETER
C_DIODE Diode (Channel) Capacitance
CONDITIONS
MIN
At 2.5VDC Reverse
11
Bias, 1MHz, 30mVAC
TYP MAX UNITS
14
17
pF
V_DIODE
I_LEAK
Diode Standoff Voltage
Diode Leakage Current
I_DIODE = 10µA
V_IN = +3.3V
(reverse bias voltage)
6.0
V
0.1
1
µA
V_SIG
Signal Clamp Voltage
Positive Clamp
Negative Clamp
I_DIODE = 10mA
5.6 6.8 9.0
V
-1.5 -0.8 -0.4 V
V_ESD In-system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL-STD-883, Method 3015
±30
kV
b) Contact Discharge per IEC 61000-4-2
±15
kV
R_DYN Dynamic Resistance
Positive
Negative
2.3
Ω
0.9
Ω
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time. Unused pins are left open.
Performance Information
Diode Characteristics (nominal conditions unless specified otherwise)
Figure 1. Insertion Loss Vs. Frequency (0V Bias)
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