CAT93C66V-TE13 Datasheet, PDF (4/16 Pages) ON Semiconductor – 4 kb Microwire Serial CMOS EEPROM

CAT93C66, CAT93W66
Table 9. A.C. CHARACTERISTICS − MATURE PRODUCT
(V_CC = +1.8 V to +5.5 V, T_A = −40°C to +125°C, unless otherwise specified.) (Note 8)
Limits
Symbol
Parameter
Min
Max
Units
t_CSS
CS Setup Time
50
ns
t_CSH
CS Hold Time
0
ns
t_DIS
DI Setup Time
100
ns
t_DIH
DI Hold Time
100
ns
t_PD1
Output Delay to 1
0.25
ms
t_PD0
Output Delay to 0
0.25
ms
t_HZ (Note 9)
Output Delay to High−Z
100
ns
t_EW
Program/Erase Pulse Width
5
ms
t_CSMIN
Minimum CS Low Time
0.25
ms
t_SKHI
Minimum SK High Time
0.25
ms
t_SKLOW
Minimum SK Low Time
0.25
ms
t_SV
Output Delay to Status Valid
0.25
ms
SK_MAX
Maximum Clock Frequency
DC
2000
kHz
8. Test conditions according to “A.C. Test Conditions” table.
9. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate
AEC−Q100 and JEDEC test methods.
Table 10. A.C. CHARACTERISTICS − NEW PRODUCT (Rev H)
(V_CC = +1.8 V to +5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
V_CC = 1.8 V − 5.5 V
Symbol
Parameter
Min
Max
t_CSS
CS Setup Time
50
t_CSH
CS Hold Time
0
t_DIS
DI Setup Time
100
t_DIH
DI Hold Time
100
t_PD1
Output Delay to 1
0.25
t_PD0
Output Delay to 0
0.25
t_HZ (Note 10) Output Delay to High−Z
100
t_EW
Program/Erase Pulse Width
5
t_CSMIN
Minimum CS Low Time
0.25
t_SKHI
Minimum SK High Time
0.25
t_SKLOW
Minimum SK Low Time
0.25
t_SV
Output Delay to Status Valid
0.25
SK_MAX
Maximum Clock Frequency
DC
2000
10. This parameter is tested initially and after a design or process change that affects the parameter.
V_CC = 4.5 V − 5.5 V
Min
Max
50
0
50
50
0.1
0.1
100
5
0.1
0.1
0.1
0.1
DC
4000
Units
ns
ns
ns
ns
ms
ms
ns
ms
ms
ms
ms
ms
kHz
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