CAT28C257 Datasheet, PDF (4/13 Pages) Catalyst Semiconductor – 256K-Bit CMOS PARALLEL E2PROM

CAT28C257
Table 4. MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
D_OUT
ACTIVE
Byte Write (WE Controlled)
L
H
D_IN
ACTIVE
Byte Write (CE Controlled)
L
H
D_IN
ACTIVE
Standby and Write Inhibit
H
X
X
High−Z
STANDBY
Read and Write Inhibit
X
H
H
High−Z
ACTIVE
Table 5. CAPACITANCE (T_A = 25°C, f = 1.0 MHz, V_CC = 5 V)
Symbol
Test
Min
Typ
Max
Conditions
Units
C_I/O (Note 7)
Input/Output Capacitance
10
V_I/O = 0 V
pF
C_IN (Note 7)
Input Capacitance
6
V_IN = 0 V
pF
7. This parameter is tested initially and after a design or process change that affects the parameter.
Table 6. A.C. CHARACTERISTICS, READ CYCLE (V_CC = 5 V ±10%, unless otherwise specified.)
28C257−12
28C257−15
Symbol
Parameter
Min
Typ
Max
Min
Typ
Max
Units
t_RC
Read Cycle Time
120
150
ns
t_CE
CE Access Time
120
150
ns
t_AA
Address Access Time
120
150
ns
t_OE
OE Access Time
50
70
ns
t_LZ (Note 8)
CE Low to Active Output
0
0
ns
t_OLZ (Note 8)
OE Low to Active Output
0
0
ns
t_HZ (Notes 8, 9)
CE High to High−Z Output
50
50
ns
t_OHZ (Notes 8, 9) OE High to High−Z Output
50
50
ns
t_OH (Note 8)
Output Hold from Address Change
0
0
ns
8. This parameter is tested initially and after a design or process change that affects the parameter.
9. Output floating (High−Z) is defined as the state when the external data line is no longer driven by the output buffer.
Table 7. POWER−UP TIMING
Symbol
Parameter
Min
Typ
Max
Units
t_PUR
t_PUW
Power−Up to Read
Power−Up to Write
100
ms
5
10
ms
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