BFL4001 Datasheet, PDF (4/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4001
10
VDS=200V
9 _ID=6.5A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Total Gate Charge, Qg -- nC
IT15302
PD -- Ta
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT15304
EAS -- Ta
120
ASO
100
7
5
3
2 IDP=13A (PW≤10μs)
10
7
IDc(*1)=6.5A
5
3
2
IDpack(*2)=4.1A
1.0
7
5
3
2
Operation in
DC _{op1e0r0a1tmi0omsn1sms} ^{100μ10sμs}
this area is
0.1
7
limited by RDS(on).
5
3 _Tc=25°C
2 _{Single pulse}
0.01
*1. Shows chip capability
*2. Our ideal heat dissipation condition
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7100 2 3 5 71000}
Drain-to-Source Voltage, VDS -- V IT16791
PD -- Tc
40
37
35
30
25
20
15
10
5
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT15305
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
IT10478
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