BFL4001 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1638B
BFL4001
N-Channel Power MOSFET
900V, 6.5A, 2.7Ω, TO-220F-3FS
http://onsemi.com
Features
• _{ON-resistance RDS(on)=2.1Ω (typ.)}
• _{10V drive}
• _{Input capacitance Ciss=850pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
VDSS
VGSS
900
V
±30
V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
6.5
A
4.1
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
13
A
Allowable Power Dissipation
PD
Tc=25°C (Our ideal heat dissipation condition)*3
2.0
W
37
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
223 mJ
Avalanche Current *5
IAV
6.5
A
Note :*1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6.5A
*5 L≤10mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
BFL4001-1E
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
2.76
0.5
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
FL4001
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/22912 TKIM TC-00002729/31010QB TKIM TC-00002256 No. A1638-1/7