BCP56-10T1G Datasheet, PDF (4/5 Pages) ON Semiconductor – NPN Silicon Epitaxial Transistor

BCP56 Series, SBCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1.1 V_CE = 2 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector
Current
1.0
0.8
0.6
I_C = 10 mA
50
mA
100 mA
0.4
T_J = 25°C
250 mA 500 mA
0.2
0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
I_C, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
1
1.6
1S
1 mS
1.4
100 mS
1.2
10 mS
1.0
0.1
0.8
0.6
0.4
0.2
0.01
0.1
1
0.0
10
100
0 20 40 60 80 100 120 140 160
V_CE, COLLECTOR EMITTER VOLTAGE (V)
T_A, AMBIENT TEMPERATURE (°C)
Figure 8. Safe Operating Area
Figure 9. Power Derating Curve
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