BCP56-10T1G Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Silicon Epitaxial Transistor

BCP56 Series, SBCP56 Series
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I_C = 100 mAdc, I_E = 0)
Collector−Emitter Breakdown Voltage
(I_C = 1.0 mAdc, I_B = 0)
Emitter−Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
Collector−Base Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
Emitter−Base Cutoff Current
(V_EB = 5.0 Vdc, I_C = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I_C = 5.0 mA, V_CE = 2.0 V) All Part Types
(I_C = 150 mA, V_CE = 2.0 V)BCP56T1, SBCP56T1, SBCP56T3
BCP56−10T1, SBCP56−10T1
BCP56−16T1, SBCP56−16T1, SBCP56−16T3
(I_C = 500 mA, V_CE = 2.0 V)All Types
Collector−Emitter Saturation Voltage
(I_C = 500 mAdc, I_B = 50 mAdc)
Base−Emitter On Voltage
(I_C = 500 mAdc, V_CE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I_C = 10 mAdc, V_CE = 5.0 Vdc, f = 35 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(on)
f_T
Min
Typ
Max
100
−
−
80
−
−
5.0
−
−
−
−
100
−
−
10
25
−
−
40
−
250
63
−
160
100
−
250
25
−
−
−
−
0.5
−
−
1.0
−
130
−
Unit
Vdc
Vdc
Vdc
nAdc
mAdc
−
Vdc
Vdc
MHz
ORDERING INFORMATION
Device
Marking
Package
Shipping^†
BCP56T1G
SBCP56T1G
BH
SOT−223
(Pb−Free)
1000 / Tape & Reel
BCP56T3G
SBCP56T3G
BH
SOT−223
(Pb−Free)
4000 / Tape & Reel
BCP56−10T1G
SBCP56−10T1G
BH−10
SOT−223
(Pb−Free)
1000 / Tape & Reel
BCP56−16T1G
SBCP56−16T1G
BH−16
SOT−223
(Pb−Free)
1000 / Tape & Reel
BCP56−16T3G
SBCP56−16T3G
BH−16
SOT−223
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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