BCP53-16T1G Datasheet, PDF (4/5 Pages) ON Semiconductor – PNP Silicon Epitaxial Transistors

BCP53 Series, SBCP53 Series
TYPICAL CHARACTERISTICS
1.2
Vce = 2 V
1.1
BCP53, −10
1.0
0.9
−55°C
0.8
0.7
0.6 ^+25°C
0.5
0.4
+150°C
0.3
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 7. BCP53, −10 Base Emitter Turn−On
Voltage vs. Collector Current V_BE(on)
1.0
BCP53, −10, −16
0.9
IC = 1.0 A
0.8
IC = 500 mA
0.7
0.6
IC = 100 mA
0.5
0.4
0.3
IC = 1.5 A
0.2
0.1
0
0.001
0.01
0.1
1
I_b, BASE CURRENT (A)
Figure 9. BCP53, −10, −16 Saturation Region
1.2
1.1 ^{Vce = 2 V}
BCP53 −16
1.0
0.9
−55°C
0.8
0.7 _+25°C
0.6
0.5
+150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 8. BCP53−16 Base Emitter Turn−On
Voltage vs. Collector Current
110
BCP53−10
100
90
BCP53
80
70
60
BCP53−16
50
40
0
1
2
3
4
5
VOLTAGE (V)
Figure 10. Input Capacitance
25
20
BCP53−10
15
10
5 ^{BCP53−16}
BCP53
0
0 2 4 6 8 10 12 14 16 18 20
VOLTAGE (V)
Figure 11. Output Capacitance
10
100 ms 10 ms
1s
1 ms
1
CONTINUOUS THERMAL LIMIT
0.1
SINGLE PULSE TEST AT T_amb = 25°C
0.01
0.1
1
10
100
Vce, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Standard Operating Area
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