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BCP53-16T1G Datasheet, PDF (2/5 Pages) ON Semiconductor – PNP Silicon Epitaxial Transistors
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BCP53 Series, SBCP53 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage (IC = −100 mAdc, IE = 0)
V(BR)CBO
−100
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
− 80
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = −100 mAdc, RBE = 1.0 kW)
V(BR)CER
−100
−
−
Vdc
Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
V(BR)EBO
− 5.0
−
−
Vdc
Collector−Base Cutoff Current (VCB = − 30 Vdc, IE = 0)
ICBO
−
−
−100
nAdc
Emitter−Base Cutoff Current (VEB = − 5.0 Vdc, IC = 0)
IEBO
−
−
−10
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = − 5.0 mAdc, VCE = − 2.0 Vdc) All Part Types
(IC = −150 mAdc, VCE = − 2.0 Vdc)
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16
(IC = − 500 mAdc, VCE = − 2.0 Vdc) All Part Types
hFE
25
−
−
−
40
−
250
63
−
160
100
−
250
25
−
−
Collector−Emitter Saturation Voltage (IC = − 500 mAdc, IB = − 50 mAdc)
VCE(sat)
−
Base−Emitter On Voltage (IC = − 500 mAdc, VCE = − 2.0 Vdc)
VBE(on)
−
DYNAMIC CHARACTERISTICS
−
− 0.5
Vdc
−
−1.0
Vdc
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz)
fT
−
50
−
MHz
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