ATP207 Datasheet, PDF (4/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP207
10
VDS=20V
9 _ID=65A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
Total Gate Charge, Qg -- nC
IT14031
PD -- Tc
60
5
3 IDP=195A
2
100
7
ID=65A
5
3
2
ASO
100m10sms1ms
PW≤10μs
10_μs
100_μs
10
7
5 Operation in this area
3 _{is limited by RDS(on).}
2
1.0
7
5
3
2
Tc=25°C
Single pulse
0.1
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ²
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
3 57
IT14032
50
100
40
80
30
60
20
40
10
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT14010
20
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
IT14011
No. A1319-4/7