ATP207 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP207
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=33A
ID=33A, VGS=10V
ID=17A, VGS=4.5V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=20V, VGS=10V, ID=65A
IS=65A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=20V
ID=33A
RL=0.61Ω
D
VOUT
ATP207
P.G
50Ω
S
Ratings
Unit
min
typ
max
40
V
1
μA
±10
μA
1.5
2.6
V
12
20
S
7
9.1 mΩ
11
15.5 mΩ
2710
pF
330
pF
220
pF
27
ns
290
ns
170
ns
110
ns
54
nC
14
nC
11
nC
1.0
1.2
V
Ordering Information
Device
ATP207-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1319-2/7