2N6034G_13 Datasheet, PDF (4/6 Pages) ON Semiconductor – Plastic Darlington Complementary Silicon Power Transistors

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
ACTIVE−REGION SAFE−OPERATING AREA
1.0
7.0
5.0
5.0 ms
1.0 ms
100 ms
3.0
dc
2.0
1.0
0.7
0.5
0.3
T_J = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T_C = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.2
0.1
5.0 7.0 10
2N6036
2N6035
20 30
50 70 100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. 2N6035, 2N6036
1.0
7.0
5.0
5.0 ms
100 ms
1.0 ms
3.0
dc
2.0
T_J = 150°C
1.0
BONDING WIRE LIMITED
0.7
THERMALLY LIMITED
0.5
@ T_C = 25°C (SINGLE PULSE)
0.3
SECOND BREAKDOWN LIMITED
0.2
0.1
5.0 7.0 10
2N6039
2N6038
20 30
50 70 100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6038, 2N6039
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 4 and 5 is based on T_J(pk) = 150_C;
T_C is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T_J(pk)
< 150_C. T_J(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
T_C = 25°C
100
70
50
C_ob
30
C_ib
20
PNP
NPN
10
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
V_R, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
PNP
2N6034, 2N6035, 2N6036
6.0 k
T_C = 125°C
4.0 k
3.0 k
25°C
2.0 k
V_CE = 3.0 V
NPN
2N6038, 2N6039
6.0 k
T_J = 125°C
4.0 k
3.0 k
25°C
2.0 k
V_CE = 3.0 V
- 55°C
- 55°C
1.0 k
1.0 k
800
800
600
600
400
300
0.04 0.06 0.1
0.2
0.4 0.6 1.0 2.0
4.0
400
300
0.04 0.06 0.1
0.2
0.4 0.6 1.0 2.0
4.0
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
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