2N6034G_13 Datasheet, PDF (3/6 Pages) ON Semiconductor – Plastic Darlington Complementary Silicon Power Transistors

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
R_B & R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
V_CC
- 30 V
D₁ MUST BE FAST RECOVERY TYPE, eg:
 1N5825 USED ABOVE I_B ≈ 100 mA
 MSD6100 USED BELOW I_B ≈ 100 mA
R_C
TUT
SCOPE
V₂
approx
R_B
+ 8.0 V
0
51
D₁
≈ 8.0 k ≈ 60
V₁
approx
-12 V
25 ms
t_r, t_f ≤ 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for t_d and t_r, D₁ is disconnected
and V₂ = 0, R_B and R_C are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
Figure 1. Switching Times Test Circuit
4.0
t_s
V_CC = 30 V I_B1 = I_B2
I_C/I_B = 250 T_J = 25°C
2.0
t_f
1.0
0.8
0.6
t_r
0.4
0.2
0.04 0.06
t_d @ V_BE(off) = 0
PNP
NPN
0.1
0.2
0.4 0.6 1.0 2.0
4.0
I_C, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1 ^0.05
0.07
0.02
0.05
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
q_JC(t) = r(t) q_JC
P_(pk)
q_JC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
t, TIME (ms)
Figure 3. Thermal Response
20 30 50
100 200 300 500 1000
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