2N5301 Datasheet, PDF (4/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(200W)

2N5301 2N5302 2N5303
5.0
3.0
2.0
TJ = 25°C
IC/IB = 10
1.0
0.7
0.5
0.3
tr @ VCC = 30 V
0.2
tr @ VCC = 10 V
0.1
td @ VOB = 2.0 V
0.07
0.05
0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30
IC, COLLECTOR CURRENT (AMP)
Figure 7. Turn–On Time
3.0
TJ = 25°C
IB1 = IB2
ts′
IC/IB = 10
ts′ ≈ ts – 1/8 tf
1.0
0.7
0.5
tf @ VCC = 30 V
0.3
tf @ VCC = 10 V
0.1
0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10
30
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn–Off Time
300
200
TJ = 175°C
100
25°C
70
50
– 55°C
30
20
VCE = 10 V
VCE = 2.0 V
10
0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10
30
IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
2.0
1.6
IC = 2.0 A 5.0 A
10 A
1.2
TJ = 25°C
20 A
0.8
0.4
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
IB, BASE CURRENT (AMP)
Figure 10. Collector Saturation Region
108
VCE = 30 V
107
IC = 10 x ICES
106
IC = 2 x ICES
105
IC ≈ ICES
104
103 TYPICAL ICES VALUES OBTAINED
FROM FIGURE 13
102
0 20 40 60 80 100 120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Effects of Base–Emitter Resistance
2.0
1.8
TJ = 25°C
1.6
1.4
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10
30
IC, COLLECTOR CURRENT (AMP)
Figure 12. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data