2N5301 Datasheet, PDF (1/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(200W)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by 2N5301/D
High-Power NPN Silicon
Transistors
. . . for use in power amplifier and switching circuits applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303)
• Excellent Safe Operating Area —
200 Watt dc Power Rating to 30 Vdc (2N5303)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{• Complements to PNP 2N4398, 2N4399 and 2N5745}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{*MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
Symbol 2N5301 2N5302 2N5303
VCEO
40
60
80
VCB
40
60
80
IC
30
30
20
IB
7.5
PD
200
1.14
TJ, Tstg
– 65 to + 200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Case to Ambient}
Symbol
θ_JC
θ_CA
Max
0.875
34
Unit
_C/W
_C/W
* Indicates JEDEC Registered Data.
TA TC
8.0 200
2N5301
2N5302
2N5303
20 AND 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 – 60 – 80 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
6.0 150
TC
4.0 100
TA
2.0 50
00
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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