2N5194_06 Datasheet, PDF (4/6 Pages) ON Semiconductor – Silicon PNP Power Transistors

2N5194, 2N5195
TURN−ON PULSE
V_BE(off)
V_in 0
V_CC R_C
V_in RB
SCOPE
APPROX
−11 V
t₁
t₂
V_in
APPROX
−11 V
t₃
TURN−OFF PULSE
C_jd << C_eb
APPROX
+9.0 V
+4.0 V
R_B AND R_C VARIED
TO OBTAIN DESIRED
CURRENT LEVELS
t₁ ≤ 7.0 ns
100 < t₂ < 500 ms
t₃ < 15 ns
DUTY CYCLE ≈ 2.0%
Figure 7. Switching Time Equivalent Test Circuit
2.0
1.0
0.7
0.5
t_r @ V_CC = 30 V
0.3
0.2
I_C/I_B = 10
T_J = 25°C
t_r @ V_CC = 10 V
0.1
0.07
0.05
0.03
t_d @ V_BE(off) = 2.0 V
0.02
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I_C, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Figure 9. Turn−On Time
10
5.0
T_J = 150°C
2.0
1.0 ms
5.0 ms
dc
100 ms
1.0
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ T_C = 25°C
0.5
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED V_CEO
0.2
2N5194
0.1
1.0 2.0
2N5195
5.0
10
20
50
100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
500
T_J = 25°C
300
200
C_eb
100
C_cb
70
50
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
20 30 40
2.0
1.0
t_s′
0.7
0.5
I_B1 = I_B2
I_C/I_B = 10
t_s′ = t_s − 1/8 t_f
T_J = 25°C
0.3
t_f @ V_CC = 30 V
0.2
t_f @ V_CC = 10 V
0.1
0.07
0.05
0.03
0.02
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I_C, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Figure 10. Turn−Off Time
Note 1:
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T_J(pk) = 150_C. T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
v 150_C. At high−case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
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