2N5194_06 Datasheet, PDF (3/6 Pages) ON Semiconductor – Silicon PNP Power Transistors

2N5194, 2N5195
2.0
1.6
1.2
I_C = 10 mA
0.8
0.4
100 mA
T_J = 25°C
1.0 A
3.0 A
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_B, BASE CURRENT (mA)
20 30
Figure 2. Collector Saturation Region
50 70 100
200 300 500
2.0
T_J = 25°C
1.6
1.2
0.8
V_BE(sat) @ I_C/I_B = 10
V_BE @ V_CE = 2.0 V
0.4
V_CE(sat) @ I_C/I_B = 10
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltage
2.0 3.0 4.0
+2.5
+2.0
*APPLIES FOR I_C/I_B ≤ h_FE @ V_CE
T_J = −65°C to +150°C
+1.5
+1.0
+0.5
*qV_C for V_CE(sat)
0
−0.5
−1.0
−1.5
qV_B for V_BE
−2.0
−2.5
0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
I_C, COLLECTOR CURRENT (AMP)
Figure 4. Temperature Coefficients
10³
V_CE = 30 Vdc
10²
T_J = 150°C
10¹
10⁰
100°C
10^−1
REVERSE
FORWARD
10^{− 2}
25°C
10^{− 3}
+0.4 +0.3 +0.2 +0.1
I_CES
0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cut−Off Region
10⁷
10⁶
10⁵
I_C = 2 x I_CES
10⁴
I_C = 10 x I_CES
I_C ≈ I_CES
V_CE = 30 V
10³
(TYPICAL I_CES VALUES
OBTAINED FROM FIGURE 5)
10²
20
40
60
80 100 120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Effects of Base−Emitter Resistance
http://onsemi.com
3