MUN5311DW1T1_05 Datasheet, PDF (30/35 Pages) ON Semiconductor – Dual Bias Resistor Transistors

MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1 NPN TRANSISTOR
1
1000
75°C
100
T_A = −25°C
25°C
0.1
75°C
−25°C ^25°C
10
I_C/I_B = 10
0.01
1
0
1
2
3
4
5
6
7
1
I_C, COLLECTOR CURRENT (mA)
Figure 118. V_CE(sat) versus I_C
V_CE = 10 V
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 119. DC Current Gain
1.2
1.0
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
I_E = 0 V
T_A = 25°C
10
20
30
40
50
60
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 120. Output Capacitance
100
100
25°C
75°C
10
T_A = −25°C
1
V_O = 5 V
0.1
01
23 4567 8
V_in, INPUT VOLTAGE (VOLTS)
9 10
Figure 121. Output Current versus Input
Voltage
25°C
10
T_A = −25°C
75°C
V_O = 0.2 V
1
0 2 4 6 8 10 12 14 16 18 20
I_C, COLLECTOR CURRENT (mA)
Figure 122. Input Voltage versus Output
Current
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