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MUN5311DW1T1_05 Datasheet, PDF (3/35 Pages) ON Semiconductor – Dual Bias Resistor Transistors
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MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5311DW1T1
IEBO
−
−
MUN5312DW1T1
−
−
MUN5313DW1T1
−
−
MUN5314DW1T1
−
−
MUN5315DW1T1
−
−
MUN5316DW1T1
−
−
MUN5330DW1T1
−
−
MUN5331DW1T1
−
−
MUN5332DW1T1
−
−
MUN5333DW1T1
−
−
MUN5334DW1T1
−
−
MUN5335DW1T1
−
−
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
hFE
35
60
60
100
80
140
80
140
160
350
160
350
3.0
5.0
8.0
15
15
30
80
200
80
150
80
140
VCE(sat)
MUN5311DW1T1
−
−
MUN5312DW1T1
−
−
MUN5313DW1T1
−
−
MUN5314DW1T1
−
−
MUN5335DW1T1
−
−
MUN5330DW1T1
−
−
MUN5331DW1T1
−
−
MUN5315DW1T1
−
−
MUN5316DW1T1
−
−
MUN5332DW1T1
−
−
MUN5333DW1T1
−
−
MUN5334DW1T1
−
−
Max
Unit
100
nAdc
500
nAdc
0.5
mAdc
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
−
Vdc
−
Vdc
Max
Unit
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
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