TIP33CG Datasheet, PDF(3/6 Page) ON Semiconductor – NPN High-Power Transistors Designed for general−purpose power amplifier and switching

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TIP33CG Datasheet, PDF (3/6 Pages) ON Semiconductor – NPN High-Power Transistors Designed for general−purpose power amplifier and switching

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TIP33A, TIP33C

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorâEmitter Sustaining Voltage (Note 2)

(IC = 30 mA, IB = 0)

TIP33A VCEO(sus)

TIP33C

100

Vdc

CollectorâEmitter Cutoff Current

(VCE = 30 V, IB = 0)

(VCE = 60 V, IB = 0)

CollectorâEmitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

EmitterâBase Cutoff Current

(VEB = 5.0 V, IC = 0)

TIP33A

TIP33C

ICEO

ICES

IEBO

0.7

0.4

1.0

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 1.0 A, VCE = 4.0 V)

(IC = 3.0 A, VCE = 4.0 V)

hFE

100

CollectorâEmitter Saturation Voltage

(IC = 3.0 A, IB = 0.3 A)

(IC = 10 A, IB = 2.5 A)

VCE(sat)

Vdc

1.0

4.0

BaseâEmitter On Voltage

(IC = 3.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

VBE(on)

Vdc

1.6

3.0

DYNAMIC CHARACTERISTICS

SmallâSignal Current Gain

(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)

CurrentâGain â Bandwidth Product

(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

hfe

3.0

MHz

http://onsemi.com

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