TIP33CG Datasheet, PDF (1/6 Pages) ON Semiconductor – NPN High-Power Transistors Designed for general−purpose power amplifier and switching

TIP33A, TIP33C
NPN High-Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Symbol
TIP33A V_CEO
TIP33C
Value
60
100
Unit
Vdc
Collector − Base Voltage
TIP33A V_CBO
60
Vdc
TIP33C
100
Emitter − Base Voltage
Collector Current − Continuous
− Peak (Note 1)
V_EBO
5.0
Vdc
I_C
10
Adc
15
Apk
Base Current − Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
I_B
P_D
T_J, T_stg
3.0
80
0.64
– 65 to
+150
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
R_qJC
1.56
°C/W
Thermal Resistance, Junction−to−Ambient R_qJA
35.7
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
10 AMPERE
NPN SILICON
POWER TRANSISTORS
60 & 100 VOLT, 80 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 4
Publication Order Number:
TIP33C/D