SBCW66GLT1G Datasheet, PDF (3/4 Pages) ON Semiconductor – General Purpose Transistor

BCW66GLT1G, SBCW66GLT1G
TYPICAL CHARACTERISTICS
1000
T_A = 150°C
T_A = 25°C
T_A = −55°C
100
V_CE = 2 V
10
0.001 0.01
0.1
1
10
100 1000
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain vs. Collector
Current
2.0
1.8
T_A = 25°C
1.6
1.4
1.2 ^{100 mA}
200 mA 500 mA I_C = 800 mA
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 4. Saturation Region
1.0
V_CE = 2 V
0.9
0.8 T_A = −55°C
0.7
0.6 ^{TA = 25°C}
100
C_ibo
C_obo
10
f = 1 MHz
0.5
0.4
0.3 ^{TA = 150°C}
0.2
1
0.1
1
10
100
1000
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 5. Base−Emitter Turn−On Voltage vs.
Collector Current
V_R, REVERSE VOLTAGE (V)
Figure 6. Capacitance
1000
V_CE = 2 V
T_A = 25°C
10,000
1000
1 s 100 ms 10 ms 1 ms
0.1 ms,
0.01 ms
100
100
10
0.1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
10
Single Pulse Test at T_A = 25°C
1
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
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