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SBCW66GLT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – General Purpose Transistor
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BCW66GLT1G, SBCW66GLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0)
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 45 Vdc, IE = 0)
(VCE = 45 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn−On Time (IB1 = IB2 = 15 mAdc)
Turn−Off Time (IC = 150 mAdc, RL = 150 W)
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
NF
ton
toff
Min
Typ
Max Unit
45
−
75
−
5.0
−
−
Vdc
−
Vdc
−
Vdc
−
−
20
nAdc
−
−
20
mAdc
−
−
20
nAdc
−
50
−
−
110
−
−
160
−
400
60
−
−
Vdc
−
−
0.7
−
−
0.3
Vdc
−
−
2.0
100
−
−
−
−
−
−
−
−
MHz
12
pF
80
pF
10
dB
−
−
100
ns
−
−
400
ns
TYPICAL CHARACTERISTICS
1
IC/IB = 10
0.1
TA = 150°C
TA = 25°C
0.01 TA = −55°C
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 IC/IB = 10
1.0
0.9
0.8 TA = −55°C
0.7
0.6
0.5 TA = 25°C
0.4
0.3
TA = 150°C
0.2
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Base Emitter Saturation Voltage vs.
Collector Current
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