|
PZT2907AT1_11 Datasheet, PDF (3/4 Pages) ON Semiconductor – PNP Silicon Epitaxial Transistor | |||
|
◁ |
INPUT
Zo = 50 W
PRF = 150 Hz
RISE TIME ï£ 2.0 ns
0
-â16 V
200 ns
1.0 k
50
PZT2907AT1, SPZT2907AT1G
-â30 V
+15 V -â6.0 V
200
TO OSCILLOSCOPE
RISE TIME ï£ 5.0 ns
INPUT
Zo = 50 W
PRF = 150 Hz
RISE TIME ï£ 2.0 ns
0
-â30 V
200 ns
1.0 k
1.0 k
37
TO OSCILLOSCOPE
RISE TIME ï£ 5.0 ns
50
1N916
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
TYPICAL ELECTRICAL CHARACTERISTICS
1000
1000
TJ = 125ï°C
TJ = 25ï°C
100
100
TJ = -â55ï°C
10
-â0.1
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
-1000
VCE = -â20 V
TJ = 25ï°C
10
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
-1000
Figure 4. Current Gain Bandwidth Product
-1.0
TJ = 25ï°C
-â0.8
-â0.6
-â0.4
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
-â0.2
VCE(sat) @ IC/IB = 10
0
-â0.1 -â0.2 -â0.5 -1.0 -â2.0 -â5.0 -10 -â20 -â50 -100-â200 -â500
IC, COLLECTOR CURRENT (mA)
Figure 5. âONâ Voltage
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
-â0.1 -â0.2 -â0.3 -â0.5 -â0.7 -1.0 -â2.0 -â3.0 -â5.0 -â7.0 -10 -â20 -â30
REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
http://onsemi.com
3
|
▷ |