NVD4808NT4G Datasheet, PDF (3/8 Pages) ON Semiconductor – Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK

NTD4808N, NVD4808N
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t_d(ON)
Rise Time
t_r
Turn−Off Delay Time
t_d(OFF)
Fall Time
t_f
DRAIN−SOURCE DIODE CHARACTERISTICS
V_GS = 11.5 V, V_DS = 15 V,
I_D = 15 A, R_G = 3.0 W
7.7
19.5
ns
23
3.5
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
V_SD
t_RR
t_a
t_b
Q_RR
V_GS = 0 V,
I_S = 30 A
T_J = 25°C
T_J = 125°C
V_GS = 0 V, dI_S/dt = 100 A/ms,
I_S = 30 A
0.93
1.2
V
0.83
20
10.4
ns
9.6
9.7
nC
Source Inductance
L_S
Drain Inductance, DPAK
L_D
Drain Inductance, IPAK
L_D
T_A = 25°C
Gate Inductance
L_G
Gate Resistance
R_G
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
2.49
nH
0.0164
1.88
3.46
1.1
W
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