NVD4808NT4G Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK

NTD4808N, NVD4808N
Power MOSFET
30 V, 63 A, Single N−Channel, DPAK/IPAK
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
30
V
V_GS
±20
V
T_A = 25°C
I_D
13.8
A
T_A = 85°C
10.7
Power Dissipation
R_qJA (Note 1)
T_A = 25°C
P_D
Continuous Drain
T_A = 25°C
ID
Current R_qJA
(Note 2)
Steady T_A = 85°C
Power Dissipation
State
T_A = 25°C
P_D
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_C = 25°C
I_D
T_C = 85°C
2.63
W
10
A
7.8
1.4
W
63
A
49
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
Pulsed Drain
Current
t_p=10ms T_A = 25°C
I_DM
54.6
W
126
A
Current Limited by Package
T_A = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V_DD = 24 V, V_GS = 10 V,
I_L = 17 A_pk, L = 1.0 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_DmaxPkg
T_J,
T_STG
I_S
dV/dt
EAS
T_L
45
−55 to
+175
45
6
144.5
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
8.0 mW @ 10 V
12.4 mW @ 4.5 V
D
I_D MAX
63 A
G
S
N−CHANNEL MOSFET
4
4
12
3
DPAK
CASE 369AA
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 ^Drain 3
Gate Source
1 23
Gate Drain Source
Y
= Year
WW = Work Week
4808N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 7
Publication Order Number:
NTD4808N/D