NTTFS5C670NL Datasheet, PDF (3/6 Pages) ON Semiconductor – Power MOSFET

NTTFS5C670NL
TYPICAL CHARACTERISTICS
140
6.5 V to
120 ^{10 V}
100
4.5 V
3.8 V
80
3.4 V
60
40
3.0 V
20
2.6 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
140
V_DS = 5 V
120
100
80
60
T_J = 25°C
40
20
T_J = 125°C
T_J = −55°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
15
10
T_J = 25°C
13
T_J = 25°C
9
I_D = 35 A
8
V_GS = 4.5 V
11
7
9
6
V_GS = 10 V
7
5
5
3.5 4.5
5.5
6.5
7.5
8.5
9.5
V_GS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
4
5
15 25 35
45 55 65 75
I_D, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0 V_GS = 10 V
I_D = 35 A
1.8
1.6
1.4
1.2
1.0
100000
10000
1000
100
T_J = 175°C
T_J = 125°C
T_J = 85°C
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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