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NTTFS5C670NL Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET | |||
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NTTFS5C670NL
Power MOSFET
60 V, 6.5 mW, 70 A, Single NâChannel
Features
⢠Small Footprint (3.3 x 3.3 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low QG and Capacitance to Minimize Driver Losses
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
60
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
ID
Steady TC = 100°C
Power Dissipation
State TC = 25°C
PD
RqJC (Notes 1, 2, 3)
TC = 100°C
70
A
49
63
W
31
Continuous Drain
Current RqJA
(Notes 1 & 3, 4)
Power Dissipation
RqJA (Notes 1, 3)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
16
A
11
3.2
W
1.6
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
440
A
Operating Junction and Storage Temperature
TJ, Tstg â55 to °C
+175
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy (IL(pk) = 3.6 A)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
68
A
EAS
166 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctionâtoâCase â Steady State (Note 3)
RqJC
2.4 °C/W
JunctionâtoâAmbient â Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51â12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
6.5 mW @ 10 V
9.1 mW @ 4.5 V
ID MAX
70 A
NâChannel
D (5 â 8)
G (4)
S (1, 2, 3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
670L
D
S AYWWG D
G
G
D
670L
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
March, 2017 â Rev. 1
Publication Order Number:
NTTFS5C670NL/D
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