NTMFS4837NH Datasheet, PDF (3/7 Pages) ON Semiconductor – Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL

NTMFS4837NH
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
t_d(ON)
t_r
t_d(OFF)
t_f
V_GS = 11.5 V, V_DS = 15 V,
I_D = 15 A, R_G = 3.0 W
9.0
14
19.6 29.3
ns
28
38.7
4.7
7
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
V_SD
t_RR
t_a
t_b
Q_RR
V_GS = 0 V,
I_S = 30 A
T_J = 25°C
T_J = 125°C
V_GS = 0 V, dI_S/dt = 100 A/ms,
I_S = 30 A
0.83 1.2
V
0.71
23.5
11.3
ns
12.2
8
nC
Source Inductance
L_S
Drain Inductance
Gate Inductance
L_D
L_G
T_A = 25°C
Gate Resistance
R_G
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
0.93
nH
0.005
1.84
0.9
W
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