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NTMFS4837NH Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL | |||
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NTMFS4837NH
Power MOSFET
30 V, 75 A, Single NâChannel, SOâ8FL
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠Low RG
⢠These are PbâFree Devices*
Applications
⢠Refer to Application Note AND8195/D
⢠CPU Power Delivery
⢠DCâDC Converters and Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
TA = 85°C
16
A
11.5
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
v10 s
TA = 25°C
PD
TA = 85°C
TA = 25°C
ID
TA = 85°C
2.2
W
1.15
26
A
18.8
Power Dissipation
TA = 25°C
PD
RqJA v10 s
Steady TA = 85°C
Continuous Drain
Current RqJA
(Note 2)
State
TA = 25°C
ID
TA = 85°C
5.8
W
3
10.2
A
7.3
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
PD
TA = 85°C
TC = 25°C
ID
TC = 85°C
0.88 W
0.46
75
A
54
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
TC = 85°C
Pulsed Drain
Current
tp=10 ms TA = 25°C
IDM
48
W
25
225
A
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DrainâtoâSource Avalanche
Energy (VDD = 30 V, VGS = 10 V, IL = 31 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â from case for 10 s)
TJ,
TSTG
IS
dV/dt
EAS
TL
â55 to
+150
40
6
144
°C
A
V/ns
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfaceâmounted on FR4 board using 1 sqâin pad, 1 oz Cu.
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.0 mW @ 10 V
8.0 mW @ 4.5 V
ID MAX
75 A
D (5,6)
G (4)
S (1,2,3)
NâCHANNEL MOSFET
MARKING
DIAGRAM
D
1
SOâ8 FLAT LEAD
CASE 488AA
STYLE 1
S
D
S 4837NH
S AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4837NHT1G
Package
SOâ8FL
(PbâFree)
Shippingâ
1500 /
Tape & Reel
NTMFS4837NHT3G SOâ8FL
5000 /
(PbâFree) Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbâFree strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
May, 2010 â Rev. 4
Publication Order Number:
NTMFS4837NH/D
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