NTMFS4833N Datasheet, PDF (3/7 Pages) ON Semiconductor – Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL

NTMFS4833N
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
V_SD
t_RR
t_a
t_b
Q_RR
V_GS = 0 V,
I_S = 30 A
T_J = 25°C
−
0.8
1.0
V
T_J = 125°C
−
0.68
−
−
38
−
V_GS = 0 V, dIS/dt = 100 A/ms,
I_S = 30 A
−
19
−
ns
−
19
−
−
36
−
nC
Source Inductance
L_S
Drain Inductance
Gate Inductance
L_D
L_G
T_A = 25°C
Gate Resistance
R_G
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
−
0.50
−
nH
−
0.005
−
nH
−
1.84
−
nH
−
1.0
−
W
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