NTMFS4833N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL

NTMFS4833N
Power MOSFET
30 V, 191 A, Single N−Channel, SO−8 FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices*
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current R_qJA
(Note 1)
T_A = 25°C
I_D
T_A = 85°C
26
A
19
Power Dissipation
R_qJA (Note 1)
T_A = 25°C
P_D
2.35 W
Continuous Drain
T_A = 25°C
ID
Current R_qJA
(Note 2)
Steady TA = 85°C
State
Power Dissipation
T_A = 25°C
P_D
R_qJA (Note 2)
16
A
12
0.91 W
Continuous Drain
Current R_qJC
(Note 1)
T_C = 25°C
I_D
T_C = 85°C
191
A
138
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
125
W
Pulsed Drain
Current
T_A = 25°C,
t_p = 10 ms
I_DM
288
A
Operating Junction and Storage
Temperature
T_J, T_STG −55 to °C
+150
Source Current (Body Diode)
Drain to Source dV/dt
I_S
dV/dt
104
A
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 30 V, V_GS = 10 V,
I_L = 35 A_pk, L = 1.0 mH, R_G = 25 W)
EAS
612.5 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(ON) MAX
2.0 mW @ 10 V
3.0 mW @ 4.5 V
D (5,6)
I_D MAX
191 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S ^4833N
S ^AYWWG
G
G
D
D
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTMFS4833NT1G SO−8 FL 1500/Tape & Reel
(Pb−Free)
NTMFS4833NT3G SO−8 FL 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
November, 2006 − Rev. 2
Publication Order Number:
NTMFS4833N/D