NTGS3136P_15 Datasheet, PDF (3/6 Pages) ON Semiconductor – Power MOSFET

NTGS3136P, NVGS3136P
TYPICAL PERFORMANCE CURVES (T_J = 25°C unless otherwise noted)
20
V_GS = −4.5 V
T_J = 25°C
−2 V
16
−1.8 V
12
−2.5 V
−1.5 V
8.0
4.0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
20
V_DS = −5 V
15
10
T_J = 25°C
5
T_J = 125°C
T_J = −55°C
0
0.5
0.75 1 1.25 1.5 1.75 2 2.25 2.5
−V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.14
0.12
I_D = −5.1 A
0.10
0.08
0.06
0.04
T_J = 125°C
0.02
T_J = 25°C
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.10
0.09 ^{TJ = 25°C}
0.08
−1.8 V
0.07
0.06
0.05
0.04
−2 V
0.03
−2.5 V
0.02
0.01
V_GS = −4.5 V
0
0
4.0
8.0
12
16
20
−I_D, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.5
2800
1.4 ^{ID = −4.5 A}
V_GS = −5.1 V
1.3
2600
2400
2200
C_iss
2000
V_GS = 0 V
T_J = 25°C
f = 1 MHz
1.2
1800
1600
1.1
1400
1200
1.0
1000
0.9
800
600
C_oss
0.8
400
200 C_rss
0.7
0
−50 −25 0 25 50 75 100 125 150
0
2
4
6
8
10
12
T_J, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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