NTD3055L170 Datasheet, PDF (3/8 Pages) ON Semiconductor – 9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK

NTD3055L170
20
V_GS = 10 V
16
8V
5V
12
6V
8
4V
3.5 V
4
3V
0
01
2
34
5
6
7
8
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
16
V_DS ≥ 10 V
12
8
4
T_J = 25°C
T_J = 100°C
T_J = −55°C
0
1 1.5 2 2.5 3 3.5 4 4.5
5 5.5 6
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.35
0.3
V_GS = 10 V
0.25
T_J = 100°C
0.2
0.15
0.1
T_J = 25°C
T_J = −55°C
0.05
0.35
0.3
V_GS = 15 V
0.25
0.2
0.15
0.1
0.05
T_J = 100°C
T_J = 25°C
T_J = −55°C
0
4
6
8
10 12
14
16 18
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0
4
8
12
16
20
24
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.2
I_D = 4.5 A
2
V_GS = 5 V
1.8
1.6
1000
V_GS = 0 V
100
T_J = 150°C
1.4
T_J = 125°C
1.2
10
1
0.8
T_J = 100°C
0.6
−50 −25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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