NSVBAT54WT1G Datasheet, PDF (3/4 Pages) ON Semiconductor – Schottky Barrier Diode

BAT54WT1G, NSVBAT54WT1G
100
1 25C
85C
10
1 50C
1.0
25C _{−40C}
− 55C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V_F, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1000
100
T_A = 150C
10
T_A = 125C
1.0
T_A = 85C
0.1
0.01
0.001
0
T_A = 25C
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3