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| NSVBAT54WT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode | |||
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BAT54WT1G, NSVBAT54WT1G
ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
30
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
â
Reverse Leakage
(VR = 25 V)
IR
â
Forward Voltage
(IF = 0.1 mAdc)
VF
â
Forward Voltage
(IF = 30 mAdc)
VF
â
Forward Voltage
(IF = 100 mAdc)
VF
â
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
â
Forward Voltage
(IF = 1.0 mAdc)
VF
â
Forward Voltage
(IF = 10 mAdc)
VF
â
Typ
â
7.6
0.5
0.22
0.41
0.52
â
0.29
0.35
Max
Unit
V
â
pF
10
mAdc
2.0
Vdc
0.24
Vdc
0.5
Vdc
0.8
ns
5.0
Vdc
0.32
Vdc
0.40
820ï W
+10 V
2k
100 mH IF
0.1 mF
0.1 mF
tr
tp
T
IF
10%
trr
T
50 Wï OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE VR
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
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