NST856BF3T5G_12 Datasheet, PDF (3/4 Pages) ON Semiconductor – PNP General Purpose Transistor

NST856BF3T5G
1.0
I_C/I_B = 10
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 _150°C
0.3
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
I_C =
100 mA
0.8
0.7
0.6
50 mA
0.5
30 mA
0.4
0.3
0.2
0.1
10 mA
0
0.00001
0.0001
0.001
0.01
I_b, BASE CURRENT (A)
Figure 5. Saturation Region
1.0
V_CE = 2.0 V
0.9
−55°C
0.8
0.7
0.6 ^25°C
0.5
0.4
150°C
0.3
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
10
9
8
7
6
C_ib
5
4
3
0
1.0
2.0
3.0
4.0
5.0
V_eb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
4.5
4.0
3.5
3.0
2.5
2.0
1.5
C_ob
1.0
0.5
0
5
10
15
20
25
30
V_cb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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