NST856BF3T5G_12 Datasheet, PDF (2/4 Pages) ON Semiconductor – PNP General Purpose Transistor

NST856BF3T5G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I_C = −10 mA)
Collector −Emitter Breakdown Voltage (I_C = −10 mA, V_EB = 0)
Collector −Base Breakdown Voltage (I_C = −10 mA)
Emitter −Base Breakdown Voltage (I_E = −1.0 mA)
Collector Cutoff Current (V_CB = −30 V)
Collector Cutoff Current (V_CB = −30 V, T_A = 150°C)
V_(BR)CEO
V_(BR)CES
V_(BR)CBO
V_(BR)EBO
I_CBO
ON CHARACTERISTICS
DC Current Gain
(I_C = −10 mA, V_CE = −5.0 V)
(I_C = −2.0 mA, V_CE = −5.0 V)
Collector −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter On Voltage
(I_C = −2.0 mA, V_CE = −5.0 V)
(I_C = −10 mA, V_CE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = −10 mA, V_CE = −5.0 Vdc, f = 100 MHz)
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
f_T
Output Capacitance
(V_CB = −10 V, f = 1.0 MHz)
C_obo
Input Capacitance
C_ibo
(V_EB = −0.5 V, I_C = 0 mA, f = 1.0 MHz)
Noise Figure
NF
(I_C = −0.2 mA, V_CE = −5.0 Vdc, R_S = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Min
−65
−80
−80
−5.0
−
−
−
220
−
−
−
−
−0.6
−
100
−
−
−
Typ
Max
Unit
−
−
V
−
−
V
−
−
V
−
−
V
−
−15
nA
−
−4.0
mA
−
150
−
290
475
V
−
−0.3
−
−0.8
V
−0.7
−
−0.9
−
V
−
−0.75
−
−0.82
−
−
MHz
−
4.5
pF
−
10
pF
−
10
dB
0.18
I_C/I_B = 10
0.16
0.14
0.12
V_CE(sat) = 150°C
0.10
25°C
0.08
0.06
0.04
−55°C
0.02
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
800
150°C (5.0 V)
700
600
150°C (1.0 V)
500
25°C (5.0 V)
400
25°C (1.0 V)
300
−55°C (5.0 V)
200
−55°C (1.0 V)
100
0
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
http://onsemi.com
2