NST847BF3T5G_12 Datasheet, PDF (3/4 Pages) ON Semiconductor – NPN General Purpose Transistor

NST847BF3T5G
1.0
I_C/I_B = 10
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 _150°C
0.3
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.00001
I_C = 100 mA
50 mA
30 mA
10 mA
0.0001
0.001
0.01
I_b, BASE CURRENT (A)
Figure 5. Saturation Region
1.0
V_CE = 2.0 V
0.9
−55°C
0.8
0.7
0.6 25°C
0.5
0.4 _150°C
0.3
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
7.0
6.5
6.0
5.5
5.0
4.5
C_ib
4.0
3.5
3.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_eb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0
C_ob
5
10
15
20
25
30
V_cb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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