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NST847BF3T5G_12 Datasheet, PDF (2/4 Pages) ON Semiconductor – NPN General Purpose Transistor | |||
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NST847BF3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage (IC = 10 mA)
Collector âEmitter Breakdown Voltage (IC = 10 mA, VEB = 0)
Collector âBase Breakdown Voltage (IC = 10 mA)
Emitter âBase Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V(BR)CEO
45
â
â
V
V(BR)CES
50
â
â
V
V(BR)CBO
50
â
â
V
V(BR)EBO
6.0
â
â
V
ICBO
â
â
â
15
nA
â
5.0
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector âEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector âEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
â
â
150
â
200
290
450
VCE(sat)
â
â
â
0.25
V
â
0.6
Base âEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base âEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
â
0.7
â
V
â
0.9
â
Base âEmitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base âEmitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
â
â
770
SMALLâSIGNAL CHARACTERISTICS
Current âGain â Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
â
â
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 V, IC = 0 mA, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Cobo
â
Cibo
â
NF
â
â
4.5
pF
â
10
pF
â
10
dB
0.18
0.16 IC/IB = 10
0.14
0.12
0.10
VCE(sat) = 150°C
0.08
25°C
0.06
0.04
â55°C
0.02
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
600
150°C (5.0 V)
500
150°C (1.0 V)
400
25°C (5.0 V)
300
25°C (1.0 V)
200 â55°C (5.0 V)
100 â55°C (1.0 V)
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
http://onsemi.com
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