NST45011MW6T1G Datasheet, PDF (3/5 Pages) ON Semiconductor – Dual Matched General Purpose Transistor NPN Matched Pair

NST45011MW6T1G
TYPICAL CHARACTERISTICS
2.0
1.5
V_CE = 10 V
T_A = 25°C
1.0
0.8
0.6
0.4
0.3
0.2
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
I_C, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
1.0
0.9 T_A = 25°C
0.8
0.7
0.6
0.5
V_BE(sat) @ I_C/I_B = 10
V_BE(on) @ V_CE = 10 V
0.4
0.3
0.2
0.1
V_CE(sat) @ I_C/I_B = 10
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I_C, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
2.0
T_A = 25°C
1.6
I_C = 200 mA
1.2
I_C = I_C = I_C = 50 mA
I_C = 100 mA
10 mA 20 mA
0.8
0.4
0
0.02
0.1
1.0
I_B, BASE CURRENT (mA)
10 20
Figure 3. Collector Saturation Region
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
T_A = 25°C
5.0
C_ib
3.0
C_ob
2.0
1.0
0.4 0.6 0.8 1.0 2.0
4.0 6.0 8.0 10
20
40
V_R, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
400
300
200
100
80
V_CE = 10 V
T_A = 25°C
60
40
30
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
I_C, COLLECTOR CURRENT (mAdc)
Figure 6. Current−Gain − Bandwidth Product
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